The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Sep. 16, 2005
Osamu Arisumi, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Katsuhiko Hieda, Yokohama, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Osamu Arisumi, Yokohama, JP;
Masahiro Kiyotoshi, Sagamihara, JP;
Katsuhiko Hieda, Yokohama, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.