The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Jul. 01, 2004
Masayuki Tanaka, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Shigehiko Saida, Yokohama, JP;
Akira Goda, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Yuichiro Mitani, Zushi, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Shigehiko Saida, Yokohama, JP;
Akira Goda, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Yuichiro Mitani, Zushi, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.