The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Feb. 29, 2008
Yoshio Ozawa, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Takashi Suzuki, Yokohama, JP;
Hirokazu Ishida, Yokohama, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Takashi Suzuki, Yokohama, JP;
Hirokazu Ishida, Yokohama, JP;
Yoshitaka Tsunashima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a silicon crystal layer on an insulating layer, the silicon crystal layer containing a crystal lattice mismatch plane, a memory cell array portion on the silicon crystal layer, the memory cell array portion including memory strings, each of the memory strings including nonvolatile memory cell transistors connected in series in a first direction, the memory strings being arranged in a second direction orthogonal to the first direction, the crystal lattice mismatch plane crossing the silicon crystal along the second direction without passing under gates of the nonvolatile memory cell transistors as viewed from a top of the silicon crystal layer, or crossing the silicon crystal along the first direction with passing under gates of the nonvolatile memory cell transistors as viewed from the top of the silicon crystal layer.