Hirokazu Ishida

Title: Hirokazu Ishida: Innovator in Semiconductor Technology

Introduction

Hirokazu Ishida is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for modern electronics.

Latest Patents

Ishida's latest patents include a semiconductor device fabrication method and a semiconductor device. The fabrication method involves forming a tunnel insulating film on a silicon substrate, followed by the creation of a floating gate on the tunnel insulating film. An integral insulating film is then formed on the floating gate, culminating in the formation of a control gate on the integral insulating film. The floating gate is constructed by applying a seed layer of amorphous silicon, followed by an impurity layer containing adsorbed boron or germanium, and finally a cap layer of silicon. Additionally, his semiconductor device patent describes a device that includes multiple silicon films arranged on a single plane, made of polysilicon with an impurity, and oriented in a (311) crystal structure.

Career Highlights

Hirokazu Ishida is currently employed at Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to push the boundaries of semiconductor technology, contributing to advancements that benefit various electronic applications.

Collaborations

Ishida has collaborated with notable colleagues in his field, including Yoshio Ozawa and Masayuki Tanaka. These partnerships have fostered a collaborative environment that enhances innovation and drives technological progress.

Conclusion

Hirokazu Ishida's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices.