The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2009

Filed:

Aug. 18, 2008
Applicants:

Masayuki Tanaka, Yokohama, JP;

Hirokazu Ishida, Yokohama, JP;

Inventors:

Masayuki Tanaka, Yokohama, JP;

Hirokazu Ishida, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile semiconductor storage device having a high-dielectric-constant insulator and a manufacturing method thereof suitable for miniaturization are disclosed. According to one aspect of the present invention, it is provided a semiconductor storage device comprising a semiconductor substrate, a plurality of first conductor layers formed on the semiconductor substrate through a first insulator, an isolation formed between the plurality of first conductor layers, a silicon oxide film formed on the first conductor layer, a high-dielectric-constant insulator formed on the silicon oxide film and the isolation and being diffused silicon and oxygen at least in a surface thereof contacting with the silicon oxide film, and a second conductor film formed above the high-dielectric-constant insulator.


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