The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Apr. 13, 2007
Akihito Yamamoto, Naka-gun, JP;
Masayuki Tanaka, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Ryota Fujisuka, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Hirokazu Ishida, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Masayuki Tanaka, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Ryota Fujisuka, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Hirokazu Ishida, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes semiconductor substrate, isolation insulating film, nonvolatile memory cells, each of the cells including tunnel insulating film, FG electrode, CG electrode, interelectrode insulating film between the CG and FG electrodes and including a first insulating film and a second insulating film on the first insulating film and having higher permittivity than the first insulating film, the interelectrode insulating film being provided on a side wall of the floating gate electrode in a cross-section view of a channel width direction of the cell, thickness of the interelectrode insulating film increasing from an upper portion of the side wall toward a lower portion of the side wall, thickness of the second insulating film on an upper corner of the FG electrode being thicker than thickness of the second insulating film on the other portions of the side wall in the cross-section view of the channel width direction.