Yokohama, Japan

Ichiro Mizushima

This inventor holds 103 USPTO granted patents and 14 published patent applications, primarily in Semiconductor Manufacturing (CPC class H01L2-976). Top assignees: Kabushiki Kaisha Toshiba, Kioxia Corporation, Semiconductor Technology Academic Research Center. Active years: 1995-2020.

USPTO Granted Patents = 103 

% Patents Active = 48.5

Average Co-Inventor Count = 4.0

ph-index = 20

Forward Citations = 1,304(Granted Patents)

Forward Citations (Not Self Cited) = 1,239(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tokyo, JP (2001 - 2004)
  • Kanagawa-ken, JP (2004 - 2014)
  • Kanagawa, JP (2005 - 2014)
  • Mie-ken, JP (2015)
  • Yokkaichi, JP (2015 - 2016)
  • Kanazawa, JP (2016)
  • Yokohama, JP (1995 - 2020)
  • Kanazawa Ishikawa, JP (2020)

Company Filing History:


Years Active: 1995-2020

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Areas of Expertise:
Semiconductor Device
Dicing Method
Non-Volatile Memory
Memory Device
Fabrication Method
Microstructure
Air Gap
Fin Transistor
SiGe Regions
Stacked Variable Resistance
Oxidation-Reduction Gases
Single Crystal Layer
103 patents (USPTO):Explore Patents

Title: Innovations and Achievements of Ichiro Mizushima

Introduction

Ichiro Mizushima, based in Yokohama, Japan, is a prolific inventor with an impressive portfolio encompassing 103 patents. His contributions span several critical areas within semiconductor technology, reflecting a profound understanding of materials and manufacturing processes.

Latest Patents

Mizushima’s recent innovations include groundbreaking patents such as a semiconductor device and a manufacturing method for semiconductor devices. The semiconductor device patent outlines a structure consisting of a silicon substrate, a device layer, and a lower layer, with unique side surfaces that curve outward. This design optimizes performance and density for semiconductor applications. Additionally, his method for manufacturing a semiconductor device discloses a process involving co-cATALYST and catalyst layers optimized for specific orientations, concluded with advanced oxidation and reduction treatments to create a graphene layer. These patents exemplify Mizushima's commitment to pushing the boundaries of semiconductor technology.

Career Highlights

Throughout his career, Ichiro Mizushima has worked with prominent organizations such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His experience within these companies has significantly influenced his approach to innovation in semiconductor development, enabling him to contribute to various advancements in this critical field.

Collaborations

Mizushima has collaborated with distinguished colleagues, including Tsutomu Sato and Hajime Nagano. Their teamwork has fostered an innovative environment that has led to significant technological breakthroughs in semiconductor devices.

Conclusion

Ichiro Mizushima stands out as a visionary inventor whose contributions to semiconductor technology have made a lasting impact. With over a hundred patents to his name, he continues to be at the forefront of innovation, shaping the future of the electronics industry. His work not only exemplifies technological advancement but also reflects a commitment to collaborative innovation.

Profile summary based on public USPTO records.
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