The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 17, 2009
Masanobu Miyao, Fukuoka, JP;
Hiroshi Nakashima, Fukuoka, JP;
Taizoh Sadoh, Fukuoka, JP;
Ichiro Mizushima, Yokohama, JP;
Masaki Yoshimaru, Hachioji, JP;
Masanobu Miyao, Fukuoka, JP;
Hiroshi Nakashima, Fukuoka, JP;
Taizoh Sadoh, Fukuoka, JP;
Ichiro Mizushima, Yokohama, JP;
Masaki Yoshimaru, Hachioji, JP;
Semiconductor Technology Academic Research Center, Yokohama-shi, JP;
Abstract
At least first and second SiGe(0≦x≦1) layers are formed on an insulating film. At least first and second material layers are formed correspondingly to the at least first and second SiGe(0≦x≦1) layers. A lattice constant of the first SiGe(0≦x≦1) layer is matched with a lattice constant of the first material layer. A lattice constant of the second SiGe(0≦x≦1) layer is matched with a lattice constant of the second material layer.