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For the Inventor, By the Inventor

Hachioji, Japan

Masaki Yoshimaru

USPTO Granted Patents = 13

Average Co-Inventor Count = 6.4

ph-index = 4

Forward Citations = 476(Granted Patents)


Company Filing History:

goldMedal12 out of 135 
 
Semiconductor Technology Academic Research Center
 patents
silverMedal3 out of 982 
 
Tohoku University
 patents
where one patent can have more than one assignee

Years Active: 2007-2015

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13 patents (USPTO):
1. 8963124 - Semiconductor device including a plurality of different functional elements and method of manufacturing the same (2015-02-24),
2. 8828886 - Low dielectric constant insulating film and method for forming the same (2014-09-09),
3. 8709939 - Semiconductor device having a multilevel interconnect structure and method for fabricating the same (2014-04-29),
4. 8304908 - Semiconductor device having a multilevel interconnect structure and method for fabricating the same (2012-11-06),
5. 8133813 - Semiconductor device with a barrier film (2012-03-13),
6. 8120007 - Phase-change memory device, phase-change channel transistor and memory cell array (2012-02-21),
7. 7943517 - Semiconductor device with a barrier film (2011-05-17),
8. 7932508 - Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array (2011-04-26),
9. 7897958 - Phase-change memory device, phase-change channel transistor, and memory cell array (2011-03-01),
10. 7892975 - Method for selectively forming electric conductor and method for manufacturing semiconductor device (2011-02-22),
11. 7838439 - Method of manufacturing an insulating film containing hafnium (2010-11-23),
12. 7781753 - Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array (2010-08-24),
13. 7304384 - Semiconductor device with a barrier film which contains manganese (2007-12-04),

Title: The Innovative Contributions of Masaki Yoshimaru

Introduction

Masaki Yoshimaru is a prominent inventor based in Hachioji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work has advanced the understanding and manufacturing of semiconductor devices, showcasing his expertise and innovative spirit.

Latest Patents

Yoshimaru's latest patents include a semiconductor device that incorporates a plurality of different functional elements and a method for manufacturing the same. This invention involves the formation of at least first and second SiGe layers on an insulating film, with specific lattice constants matched to corresponding material layers. Another notable patent is for a low dielectric constant insulating film, which is formed from a polymer containing silicon, oxygen, carbon, and hydrogen atoms. This film features straight chain molecules linked in a specific structure, demonstrating a high area ratio of linear SiO structures.

Career Highlights

Throughout his career, Masaki Yoshimaru has worked with esteemed institutions such as the Semiconductor Technology Academic Research Center and Tohoku University. His experience in these organizations has allowed him to collaborate on groundbreaking research and development projects in semiconductor technology.

Collaborations

Yoshimaru has collaborated with notable colleagues, including Junichi Koike and Noriyoshi Shimizu. These partnerships have contributed to the advancement of innovative technologies in the semiconductor field.

Conclusion

Masaki Yoshimaru's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.

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