The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Feb. 24, 2005
Junichi Koike, Sendai, JP;
Makoto Wada, Sendai, JP;
Shingo Takahashi, Ebina, JP;
Noriyoshi Shimizu, Tama, JP;
Hideki Shibata, Yokohama, JP;
Satoshi Nishikawa, Hachioji, JP;
Takamasa Usui, Tokyo, JP;
Hayato Nasu, Yokohama, JP;
Masaki Yoshimaru, Hachioji, JP;
Junichi Koike, Sendai, JP;
Makoto Wada, Sendai, JP;
Shingo Takahashi, Ebina, JP;
Noriyoshi Shimizu, Tama, JP;
Hideki Shibata, Yokohama, JP;
Satoshi Nishikawa, Hachioji, JP;
Takamasa Usui, Tokyo, JP;
Hayato Nasu, Yokohama, JP;
Masaki Yoshimaru, Hachioji, JP;
Semiconductor Technology Academic Research Center, Yokohama-shi, JP;
Abstract
A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.