Ebina, Japan

Shingo Takahashi


Average Co-Inventor Count = 9.0

ph-index = 3

Forward Citations = 73(Granted Patents)


Company Filing History:


Years Active: 2007-2012

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3 patents (USPTO):Explore Patents

Title: Shingo Takahashi: Innovator in Semiconductor Technology

Introduction

Shingo Takahashi is a prominent inventor based in Ebina, Japan, known for his significant contributions to semiconductor technology. With a total of three patents to his name, he has made strides in the development of advanced semiconductor devices.

Latest Patents

Takahashi's latest patents focus on a semiconductor device with a barrier film. The method involves forming an opening in an interlevel insulating film on a semiconductor substrate. It includes creating an auxiliary film containing a predetermined metal element to cover the inner surface of the opening. Following this, a main film is formed to fill the opening, with copper as the primary component for the interconnection main layer. A heat treatment is performed to diffuse the metal element from the auxiliary film onto the surface of the interlevel insulating film, resulting in a barrier film that contains a compound of the metal element and a component of the insulating film.

Career Highlights

Takahashi works at the Semiconductor Technology Academic Research Center, where he has been instrumental in advancing semiconductor manufacturing techniques. His innovative approaches have garnered attention in the field, contributing to the efficiency and effectiveness of semiconductor devices.

Collaborations

Some of his notable coworkers include Junichi Koike and Makoto Wada, who have collaborated with him on various projects within the semiconductor research domain.

Conclusion

Shingo Takahashi's work in semiconductor technology exemplifies the impact of innovation in the field. His patents and contributions continue to shape the future of semiconductor devices.

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