The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Oct. 23, 2007
Junichi Koike, Sendai, JP;
Makoto Wada, Sendai, JP;
Shingo Takahashi, Ebina, JP;
Noriyoshi Shimizu, Tama, JP;
Hideki Shibata, Yokohama, JP;
Satoshi Nishikawa, Hachioji, JP;
Takamasa Usui, Tokyo, JP;
Hayato Nasu, Yokohama, JP;
Masaki Yoshimaru, Hachioji, JP;
Junichi Koike, Sendai, JP;
Makoto Wada, Sendai, JP;
Shingo Takahashi, Ebina, JP;
Noriyoshi Shimizu, Tama, JP;
Hideki Shibata, Yokohama, JP;
Satoshi Nishikawa, Hachioji, JP;
Takamasa Usui, Tokyo, JP;
Hayato Nasu, Yokohama, JP;
Masaki Yoshimaru, Hachioji, JP;
Semiconductor Technology Academic Research Center, Yokohama-shi, JP;
Abstract
A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.