The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Apr. 05, 2012
Seiji Samukawa, Sendai, JP;
Shigeo Yasuhara, Sendai, JP;
Shingo Kadomura, Atsugi, JP;
Tsutomu Shimayama, Kumamoto, JP;
Hisashi Yano, Joyo, JP;
Kunitoshi Tajima, Kyoto, JP;
Noriaki Matsunaga, Chigasaki, JP;
Masaki Yoshimaru, Hachioji, JP;
Seiji Samukawa, Sendai, JP;
Shigeo Yasuhara, Sendai, JP;
Shingo Kadomura, Atsugi, JP;
Tsutomu Shimayama, Kumamoto, JP;
Hisashi Yano, Joyo, JP;
Kunitoshi Tajima, Kyoto, JP;
Noriaki Matsunaga, Chigasaki, JP;
Masaki Yoshimaru, Hachioji, JP;
Tohoku University, Sendai-shi, JP;
Abstract
Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH) is 66% or more.