Chigasaki, Japan

Noriaki Matsunaga

This inventor holds 48 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Tohoku University, Other. Active years: 1998-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Noriaki Matsunaga. Retrieved from https://idiyas.com/inventor/noriaki-matsunaga

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 48 

% Patents Active = 43.8

Average Co-Inventor Count = 2.5

ph-index = 14

Forward Citations = 1,105(Granted Patents)


Location History:

  • Hiratsuka, JP (1998)
  • Kanagawa-ken, JP (2010)
  • Kanagawa, JP (2011 - 2013)
  • Chigasaki, JP (2001 - 2014)

Company Filing History:


Years Active: 1998-2014

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Areas of Expertise:
Low Dielectric Constant
Metal Wiring
Wiring Layout
Integrated Circuit
Pattern Generation
Copper Adhesion
Multi-Layer Interconnection
Probe Pins
Testing Characteristics
Ground Plane
48 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Noriaki Matsunaga

Introduction

Noriaki Matsunaga, based in Chigasaki, Japan, is a prolific inventor with a remarkable portfolio comprising 48 patents. His innovations primarily focus on semiconductor technologies, specifically in the realm of insulating films and semiconductor device manufacturing.

Latest Patents

Matsunaga's latest patents showcase his expertise in creating low dielectric constant insulating films. One such patent details a low dielectric constant insulating film formed from a polymer that consists of silicon (Si), oxygen (O), carbon (C), and hydrogen (H) atoms. This film includes straight-chain molecules with multiple basic molecules containing an SiO structure linked together. The film achieves an impressive area ratio of 49% or more for the linear type SiO structure and 66% or more for the Si(CH) signal.

Another significant patent pertains to the manufacturing method of a semiconductor device which features a metal wiring capped with metal. This process involves several stages, including the creation of an insulating film above a semiconductor substrate, the fabrication of a wiring trench within the film, and the selective formation of a metal cap on the upper surface of the metal wiring after a hydrophobic treatment.

Career Highlights

Throughout his career, Noriaki Matsunaga has contributed his knowledge and skills to leading organizations, including Toshiba Corporation and Tohoku University. His work has not only advanced technological innovations but has also significantly impacted the field of semiconductor devices.

Collaborations

Matsunaga has collaborated with several colleagues, including notable figures like Kazuyuki Higashi and Hideki Shibata. These collaborations highlight the importance of teamwork in pushing the boundaries of semiconductor technology.

Conclusion

Noriaki Matsunaga’s contributions to the field of semiconductor technology through his 48 patents reflect his dedication to innovation. His latest work continues to pave the way for advancements in insulating films and semiconductor devices, underscoring his significance as an inventor in the ever-evolving landscape of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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