The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Mar. 18, 2010
Hideyuki Tomizawa, Rensselaer, NY (US);
Noriaki Matsunaga, Chigasaki, JP;
Tadayoshi Watanabe, Oita, JP;
Shiro Mishima, Yokohama, JP;
Masako Kodera, Yokohama, JP;
Hideyuki Tomizawa, Rensselaer, NY (US);
Noriaki Matsunaga, Chigasaki, JP;
Tadayoshi Watanabe, Oita, JP;
Shiro Mishima, Yokohama, JP;
Masako Kodera, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.