Yokkaichi, Japan

Shiro Mishima


Average Co-Inventor Count = 6.7

ph-index = 6

Forward Citations = 138(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (1997 - 1998)
  • Yokkaichi, JP (1997 - 2007)
  • Yokohama, JP (1995 - 2013)

Company Filing History:


Years Active: 1995-2013

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10 patents (USPTO):

Title: Shiro Mishima: Innovator in Semiconductor Technology

Introduction

Shiro Mishima is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His innovative work has advanced the manufacturing processes and efficiency of semiconductor devices.

Latest Patents

Mishima's latest patents include a semiconductor device that features a metal wiring with a metal cap. This invention outlines a method for manufacturing a semiconductor device that involves forming an insulating film above a semiconductor substrate, creating a wiring trench, and applying a hydrophobic treatment to enhance performance. Another notable patent is a polishing apparatus designed for polishing the surface of a workpiece. This apparatus includes a housing unit with separate chambers for polishing and cleaning, ensuring efficient processing of the workpiece.

Career Highlights

Throughout his career, Shiro Mishima has worked with notable companies such as Kabushiki Kaisha Toshiba and Ebara Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Mishima has collaborated with talented individuals in the industry, including Atsushi Shigeta and Hiromi Yajima. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Shiro Mishima's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in manufacturing processes and device efficiency.

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