Kabushiki Kaisha Toshiba

Ebara Corporation

Other

Shiro Mishima

Atsushi Shigeta

Masako Kodera

Hiromi Yajima

Riichiro Aoki

Gisuke Kouno

Masako Watase

Tetsuji Togawa

Manabu Tsujimura

Toyomi Nishi

Shoichi Kodama

Harumitsu Saito

Yukio Imoto

Kazuaki Himukai

Katsuya Okumura

Masami Watase

Norio Kimura

Koji Ono

Koji Saito

Hozumi Yasuda

Noriaki Matsunaga

Tamami Takahashi

Hideyuki Tomizawa

Riichirou Aoki

You Ishii

Toshiro Maekawa

Tadayoshi Watanabe

Motoaki Okada

A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

Semiconductor device including a metal wiring with a metal cap

A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.

Polishing apparatus

Polishing apparatus and a method of polishing and cleaning and drying a wafer

Polishing apparatus and method

A semiconductor cleaning method includes scrubbing a semiconductor wafer using a cleaning member made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores have an average diameter ranging from 10 to 200 .mu.m. The cleaning member may be made of either polyurethane foam or non-woven fabric composed of fibers bound together by urethane resin. By this scrubbing step, particles that are strongly attached to the surface of a substrate such as the semiconductor wafer can easily be removed. During cleaning of the substrate, surface irregularities and crystalline protrusions on the surface of a substrate such as a semiconductor wafer can be scraped off to adjust the surface roughness of the semiconductor wafer to a desired degree for making the semiconductor wafer surface flat.

Method for cleaning workpiece

A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.

Method for planarizing a semiconductor body by CMP method and an

Polishing aparatus and method

A polishing apparatus for polishing a surface of an object such as a semiconductor wafer includes a turntable having a polishing cloth mounted on an upper surface thereof, a top ring for holding and pressing the object against the polishing cloth, and a plurality of radially arranged nozzles for supplying a polishing solution, containing abrasive material, of different concentrations that differ along a radial direction of the polishing cloth.

Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

Apparatus for forming a silicon oxide film on a silicon wafer

Method for forming a silicon oxide film on a silicon waffer

Growing community of inventors

Yokkaichi, Japan

Shiro Mishima