The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7977795 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 12, 2011

Filed:

Jan. 03, 2007
Applicants:

Kazuyuki Higashi, Kanagawa, JP;

Noriaki Matsunaga, Kanagawa, JP;

Inventors:

Kazuyuki Higashi, Kanagawa, JP;

Noriaki Matsunaga, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device according to an embodiment of the present invention has: a semiconductor substrate; an interlayer insulating film formed above the semiconductor substrate; a protective film formed on the interlayer insulating film, the protective film having a higher density than that of the interlayer insulating film; at least one of a wiring and a dummy wiring formed in the interlayer insulating film and the protective film; and a separation wall formed within the interlayer insulating film so as to surround a low density region to separate the low density region from other regions, a sum of covering densities of the wiring and the dummy wiring being lower than a predetermined prescribed value in the low density region.


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Higashi, Kazuyuki. (2011). Semiconductor device, method of fabricating the same, and pattern generating method (U.S. Patent No. 7977795). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7977795

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