The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Dec. 06, 2012
Yumi Hayashi, Kanagawa, JP;
Atsuko Sakata, Kanagawa, JP;
Kei Watanabe, Tokyo, JP;
Noriaki Matsunaga, Kanagawa, JP;
Shinichi Nakao, Kanagawa, JP;
Makoto Wada, Kanagawa, JP;
Hiroshi Toyoda, Kanagawa, JP;
Yumi Hayashi, Kanagawa, JP;
Atsuko Sakata, Kanagawa, JP;
Kei Watanabe, Tokyo, JP;
Noriaki Matsunaga, Kanagawa, JP;
Shinichi Nakao, Kanagawa, JP;
Makoto Wada, Kanagawa, JP;
Hiroshi Toyoda, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.