The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8358008 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 22, 2013

Filed:

Mar. 18, 2010
Applicants:

Makoto Wada, Kanagawa, JP;

Noriaki Matsunaga, Kanagawa, JP;

Yosuke Akimoto, Kanagawa, JP;

Inventors:

Makoto Wada, Kanagawa, JP;

Noriaki Matsunaga, Kanagawa, JP;

Yosuke Akimoto, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device according to one embodiment includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate and containing a wiring trench; a first catalyst layer provided directly or via another member on side and bottom surfaces of the wiring trench; and a first graphene layer provided in the wiring trench so as to be along the side and bottom surface of the wiring trench, the first graphene layer being provided on the first catalyst layer so as to be in contact with the first catalyst layer.


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Wada, Makoto. (2013). Semiconductor device (U.S. Patent No. 8358008). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8358008

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