The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Aug. 02, 2007
Sumio Hosaka, Takasaki, JP;
Hayato Sone, Midori, JP;
Masaki Yoshimaru, Hachioji, JP;
Takashi Ono, Hachioji, JP;
Mayumi Nakasato, Gifu, JP;
Sumio Hosaka, Takasaki, JP;
Hayato Sone, Midori, JP;
Masaki Yoshimaru, Hachioji, JP;
Takashi Ono, Hachioji, JP;
Mayumi Nakasato, Gifu, JP;
Semiconductor Technology Academic Research Center, Yokohama, JP;
Abstract
To reduce the voltage required to cause a phase transition from an amorphous phase to a crystalline phase, a phase-change memory device () comprises: a first electrode (); a second electrode (); and a memory layer () provided between the first () and second () electrodes, wherein the memory layer () includes at least a first layer () formed from a phase-change material which is stable in either the amorphous phase or the crystalline phase at room temperature, and a second layer () formed from a resistive material, and wherein the resistance value of the second layer () is smaller than the resistance value of the first layer () in the amorphous phase, but is larger than the resistance value of the first layer () in the crystalline phase.