Average Co-Inventor Count = 5.5

ph-index = 12

Forward Citations = 470(Granted Patents)

Location History:

Kodaira, JP (1982)
Amsterdam, NL (1987)
Saitama, JP (1991)
Tokorozawa, JP (1983 - 1994)
Fukuoka, JP (2003 - 2015)

Company Filing History:

Renesas Technology Corp.

patents

5. 1 out of 7,524

Renesas Electronics Corporation

patents

6. 1 out of 1,037

Agency of Industrial Science and Technology

patents

7. 1 out of 135

Semiconductor Technology Academic Research Center

patents

where one patent can have more than one assignee

Years Active: 1982-2015

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30 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8963124 - Semiconductor device including a plurality of different functional elements and method of manufacturing the same (2015-02-24),

2. 8304810 - Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium (2012-11-06),

3. 7977221 - Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same (2011-07-12),

4. 7767548 - Method for manufacturing semiconductor wafer including a strained silicon layer (2010-08-03),

5. 7579229 - Semiconductor device and semiconductor substrate (2009-08-25),

6. 7317207 - Semiconductor device, method of making the same and liquid crystal display device (2008-01-08),

7. 6903372 - Semiconductor device, method of making the same and liquid crystal display device (2005-06-07),

8. 6888162 - Electronic apparatus having polycrystalline semiconductor thin film structure (2005-05-03),

9. 6545294 - ELECTRONIC APPARATUS HAVING SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF TRANSISTORS FORMED ON A POLYCRYSTALLINE LAYERED STRUCTURE IN WHICH THE NUMBER OF CRYSTAL GRAINS IN EACH POLYCRYSTALLINE LAYER IS GRADUALLY REDUCED FROM LOWER TO UPPER LAYER (2003-04-08),

10. 6529304 - Optical communication equipment and system (2003-03-04),

11. 5357131 - Semiconductor memory with trench capacitor (1994-10-18),

12. 5241197 - Transistor provided with strained germanium layer (1993-08-31),

13. 5237528 - Semiconductor memory (1993-08-17),

14. 5214496 - Semiconductor memory (1993-05-25),

15. 5066355 - Method of producing hetero structure (1991-11-19),

Title: Innovations of Masanobu Miyao: A Pioneer in Semiconductor Technologies

Introduction: Masanobu Miyao, located in Fukuoka, Japan, is a distinguished inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 30 patents, Miyao has established himself as a key figure in the innovation landscape, focusing on the development of advanced semiconductor devices.

Latest Patents: Among his latest patents, Miyao has developed a semiconductor device that includes a plurality of different functional elements and a corresponding method of manufacturing. This patent features a design where at least first and second SiGe (Silicon Germanium) layers are formed on an insulating film, ensuring that the lattice constants of these layers are matched with those of the corresponding material layers. Another notable patent presents a semiconductor device and substrate with selectively etched portions filled with silicon germanium. This innovation aims to create a field effect transistor characterized by low power consumption and high speed, achieved through the application of strain in the channel forming layer to enhance carrier mobility.

Career Highlights: Miyao's career boasts impressive affiliations with industry leaders such as Hitachi, Ltd. and Sumco Corporation. His work at these companies has significantly advanced semiconductor research, contributing to the evolution of various technologies within the sector.

Collaborations: Throughout his career, Masanobu Miyao has collaborated with esteemed colleagues such as Masao Tamura and Kiyokazu Nakagawa, fostering a collaborative environment that enhances creativity and innovation in semiconductor research.

Conclusion: Masanobu Miyao's relentless pursuit of innovation in semiconductor technology exemplifies the impact of dedicated inventors on modern electronics. His work not only pushes the boundaries of what is possible in hardware development but also inspires future generations of inventors to continue exploring the potential of semiconductor advancements.

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