The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Oct. 05, 2007
Masaharu Ninomiya, Tokyo, JP;
Koji Matsumoto, Tokyo, JP;
Masahiko Nakamae, Tokyo, JP;
Masanobu Miyao, Fukuoka, JP;
Masaharu Ninomiya, Tokyo, JP;
Koji Matsumoto, Tokyo, JP;
Masahiko Nakamae, Tokyo, JP;
Masanobu Miyao, Fukuoka, JP;
Abstract
A strained Si—SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layeron an SOI substratehaving an Si layerand a buried oxide film; forming protective filmson the surface of the SiGe mixed crystal layer; implanting light element ions into a vicinity of the interface between the Si layerand the buried oxide film; performing a first heat treatment at a temperature in the range of 400 to 1000° C.; performing a second heat treatment at a temperature not lower than 1050° C. under an oxidizing atmosphere; performing a third heat treatment at a temperature not lower than 1050° C. under an inert atmosphere; removing the Si oxide filmformed on the surface; and forming a strained Si layer