The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Jun. 07, 2005
Shinya Yamaguchi, Mitaka, JP;
Masanobu Miyao, Fukuoka, JP;
Nobuyuki Sugii, Tokyo, JP;
Seang-kee Park, Hachioji, JP;
Kiyokazu Nakagawa, Kofu, JP;
Shinya Yamaguchi, Mitaka, JP;
Masanobu Miyao, Fukuoka, JP;
Nobuyuki Sugii, Tokyo, JP;
Seang-kee Park, Hachioji, JP;
Kiyokazu Nakagawa, Kofu, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.