The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
Jan. 17, 1992
Hideo Sunami, Tokyo, JP;
Tokuo Kure, Kokubunji, JP;
Masanobu Miyao, Tokorozawa, JP;
Yoshifumi Kawamoto, Kanagawa, JP;
Katsuhiro Shimohigashi, Musashimurayama, JP;
Yoshio Sakai, Kanagawa, JP;
Osamu Minato, Tokyo, JP;
Toshiaki Masuhara, Tokyo, JP;
Mitsumasa Koyanagi, Cupertino, CA (US);
Shinji Shimizu, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed by a plate which is made up of the side walls and base of a groove formed in a semiconductor substrate, and by a capacitor electrode formed on the side walls and the base, over an insulation film, and which is connected electrically to the source or drain of the insulated-gate field-effect transistor. Various embodiments are provided for reducing size and preventing leakage between other memory cells, including forming stacked capacitors, forming the transistor over the capacitor, using a silicon-over-insulator arrangement for the transistor, forming a common capacitor plate and providing high impurity layers within the substrate.