Average Co-Inventor Count = 5.9

ph-index = 20

Forward Citations = 1,107(Granted Patents)

Location History:

Kokubunji, JA (1978)
Kokubunji, JP (1981 - 1986)
Kodaira, JP (1984 - 1991)
Nishitama, JP (1986 - 1992)
Tokyo, JP (1987 - 1993)
Hinode, JP (1988 - 1996)
Hinodemachi, JP (1989 - 1997)

Company Filing History:

Hitachi Microcomputer Eng. Ltd.

patents

2 out of 1,112

Hitachi Maxell, Limited

patents

4. 1 out of 182

Hitachi Vlsi Engineering Corp.

patents

5. 1 out of 6

Hitachi, Vlsi Eng. Corp.

patents

6. 1 out of 1

Hitachi Microcomputer Hitachi, Ltd. & Engineering, Ltd.

patent

where one patent can have more than one assignee

Years Active: 1978-1997

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41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5700705 - Semiconductor integrated circuit device (1997-12-23),

2. 5646423 - Semiconductor integrated circuit device (1997-07-08),

3. 5619055 - Semiconductor integrated circuit device (1997-04-08),

4. 5483083 - Semiconductor integrated circuit device (1996-01-09),

5. 5237528 - Semiconductor memory (1993-08-17),

6. 5214496 - Semiconductor memory (1993-05-25),

7. 5194749 - Semiconductor integrated circuit device (1993-03-16),

8. 5172335 - Semiconductor memory with divided bit load and data bus lines (1992-12-15),

9. 5148387 - Logic circuit and data processing apparatus using the same (1992-09-15),

10. 5132771 - Semiconductor memory device having flip-flop circuits (1992-07-21),

11. 5079611 - Semiconductor integrated circuit device and process for fabricating the (1992-01-07),

12. 5028975 - Semiconductor devices and a process for producing the same (1991-07-02),

13. 4992677 - High speed MOSFET output buffer with low noise (1991-02-12),

14. 4937790 - Semiconductor memory device (1990-06-26),

15. 4935901 - Semiconductor memory with divided bit load and data bus lines (1990-06-19),

Title: **Osamu Minato: A Pioneer in Semiconductor Innovations**

Introduction

Osamu Minato, an esteemed inventor based in Tokyo, Japan, holds an impressive portfolio of 41 patents primarily in the field of semiconductor technology. His contributions have significantly advanced the capabilities of memory cell designs, showcasing his expertise and innovative spirit in engineering.

Latest Patents

Among his noteworthy inventions, Minato's latest patents involve the manufacturing of semiconductor integrated circuit devices. Specifically, he has developed a memory cell utilizing a pair of cross-coupled CMOS inverters within a Static Random-Access Memory (SRAM). This innovative design features load MISFETs that are strategically stacked above the semiconductor substrate and drive MISFETs. His process for creating each load MISFET includes the formation of source, drain, and channel regions within the same polycrystalline silicon film, with a distinct gate electrode composed of a different conductive layer. This stacked arrangement enhances the effective capacitance at the storage nodes, marking a significant improvement in memory cell performance.

Career Highlights

Minato's career includes impactful tenures at prestigious companies such as Hitachi, Ltd. and Hitachi Microcomputer Engineering Ltd. His work at these organizations has focused on cutting-edge semiconductor technology, positioning him as a leader in innovation within the industry.

Collaborations

Throughout his career, Minato has collaborated with esteemed colleagues, including Toshiaki Masuhara and Yoshio Sakai. Their collaborative efforts have played a crucial role in pushing the boundaries of semiconductor research and development, leading to advancements that benefit various applications in modern technology.

Conclusion

Osamu Minato's contributions to semiconductor technology are a testament to his ingenuity and commitment to innovation. With a notable collection of patents to his name, his work continues to influence the direction of electronic engineering and the future of memory device technology. His career reflects a deep dedication to pushing the frontiers of what is possible in the realm of integrated circuits.

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