The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1993
Filed:
Feb. 19, 1992
Satoshi Meguro, Hinode, JP;
Kiyofumi Uchibori, Hachioji, JP;
Norio Suzuki, Koganei, JP;
Makoto Motoyoshi, Hachioji, JP;
Atsuyoshi Koike, Kokubunji, JP;
Toshiaki Yamanaka, Houya, JP;
Yoshio Sakai, Shiroyama, JP;
Toru Kaga, Urawa, JP;
Naotaka Hashimoto, Hachioji, JP;
Takashi Hashimoto, Hachioji, JP;
Shigeru Honjou, Kodaira, JP;
Osamu Minato, Hinode, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a memory cell of SRAM of CMOS type, load MISFET having a polycrystalline silicon film as area of source, drain and channel is stacked on drive MISFET, and gate electrodes of the drive MISFET and the load MISFET are constituted by conductive films in different layers. Area of source and drain provided on the polycrystalline silicon film has an overlapped area with the gate electrode of the load MISFET.