Iruma, Japan

Toshiaki Yamanaka

This inventor holds 67 USPTO granted patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Hitachi, Ltd., Renesas Technology Corp., Hitachi Vlsi Engineering Corp.. Active years: 1988-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiaki Yamanaka. Retrieved from https://idiyas.com/inventor/toshiaki-yamanaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 74.6

Average Co-Inventor Count = 7.4

ph-index = 17

Forward Citations = 1,112(Granted Patents)

Forward Citations (Not Self Cited) = 1,038(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hoya, JP (1988 - 1992)
  • Iruma-shi, Saitama, JP (1993)
  • Houya, JP (1989 - 1997)
  • Iruma-shi, JP (2003)
  • Ashikaga, JP (2006)
  • Iruma, JP (1991 - 2007)
  • Saitama, JP (2009)
  • Menlo Park, CA (US) (1998 - 2012)

Company Filing History:


Years Active: 1988-2012

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Areas of Expertise:
Integrated Circuit
Semiconductor Device
Memory Arrangement
Capacitor
Patterning
Manufacturing Process
Storage Capacity
Self-Alignment
MISFET
SRAM
Thermal Management
Interlayer Dielectric
67 patents (USPTO):Explore Patents

Title: Toshiaki Yamanaka: Pioneer in Semiconductor Technology

Introduction

Toshiaki Yamanaka, a distinguished inventor based in Iruma, Japan, has made remarkable contributions to the field of semiconductor technologies. With an impressive portfolio of 67 patents, Yamanaka has played a critical role in innovating technologies that enhance the performance and efficiency of electronic devices.

Latest Patents

Among his latest innovations, Yamanaka has developed a semiconductor integrated circuit device and process for manufacturing a complete CMOS type SRAM. This innovative SRAM features a memory cell composed of six MISFETs. It includes a pair of local wiring lines for connecting the input/output terminals of CMOS inverters, formed of a refractory metal silicide layer over a first conducting layer that constitutes the individual gate electrodes of the drive, transfer, and load MISFETs. Furthermore, a reference voltage line arranged to form a capacity element is superposed over local wiring lines, enhancing the circuit's efficiency. This technology utilizes resistance lowering means such as silicification for optimal performance.

Career Highlights

Yamanaka's professional journey includes significant tenures at prominent companies such as Hitachi and Renesas Technology Corporation. His work with these institutions has significantly propelled advancements in semiconductor technology, allowing for the development of more compact and efficient electronic circuits and devices.

Collaborations

Throughout his illustrious career, Toshiaki Yamanaka collaborated with accomplished professionals like Shuji Ikeda and Naotaka Hashimoto. These partnerships have contributed to the innovative processes and technologies that Yamanaka has pioneered, further establishing him as a leading figure in the semiconductor field.

Conclusion

Toshiaki Yamanaka's extensive patent portfolio and innovative developments underscore his status as a valuable inventor in the semiconductor industry. His contributions continue to shape the future of electronic technology, highlighting the importance of innovation in achieving progress and efficiency within the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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