Method for manufacturing semiconductor wafer including a strained silicon layer

Abstract

A method for manufacturing a semiconductor wafer with a strained Si layer having sufficient tensile strain and few crystal defects, while achieving a relatively simple layered structure, is provided. The method includes the steps of: (a) forming an SiGe mixed crystal layerand a first Si layerin this order on the surface of a silicon wafer; (b) forming an SiOlayeron top of the first Si layer and/or a support wafer; (c) forming a layered productby stacking the silicon wafer and the support wafer with the SiOlayer being placed therebetween; (d) forming a second Si layerby thinning the silicon wafer of the layered product; (e) implanting hydrogen ion and/or rare gas ion, such that ionic concentration peaks in a predetermined area; (f) subjecting the layered product to a first heat treatment; and (g) carrying out a second heat treatment following the first heat treatment, thereby relaxing the SiGe mixed crystal layer and diffusing Ge through portions of the first Si layer and the second Si layer.