The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Jan. 22, 2008
Nobuyuki Sugii, Tokyo, JP;
Kiyokazu Nakagawa, Sayama, JP;
Shinya Yamaguchi, Mitaka, JP;
Masanobu Miyao, Fukuoka, JP;
Nobuyuki Sugii, Tokyo, JP;
Kiyokazu Nakagawa, Sayama, JP;
Shinya Yamaguchi, Mitaka, JP;
Masanobu Miyao, Fukuoka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.