The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1991
Filed:
Nov. 16, 1989
Masanobu Miyao, Saitama, JP;
Kiyokazu Nakagawa, Saitama, JP;
Kiyonori Ohyu, Tokyo, JP;
Eiichi Murakami, Tokyo, JP;
Takashi Ohshima, Tokyo, JP;
Agency of Industrial Science and Technology, Tokyo, JP;
Abstract
A method of producing a hetero structure, including the steps of depositing hydrogen atoms or halogen atoms onto a surface of a first single crystal layer formed of semiconductor or metal silicide, and forming a second single crystal layer on the first single crystal layer by hetero epitaxial growth, the second single crystal layer being formed of semiconductor or metal silicide different from the material of the first single crystal layer, wherein both of the steps are continuously conducted without taking the hetero structure out of a producing device. Further, the number of the hydrogen atoms or the halogen atoms to be deposited is equal to or in the range of .+-.50% with reference to the number of dangling bonds existing in a hetero interface between the first single crystal layer and the second single crystal layer, so that the lattice defects in the hetero interface can be reduced.