The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jan. 14, 2011
Masayuki Ichige, Yokkaichi, JP;
Fumitaka Arai, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Toshitake Yaegashi, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Ichiro Mizushima, Yokohama, JP;
Yoshihiko Saito, Yokosuka, JP;
Masayuki Ichige, Yokkaichi, JP;
Fumitaka Arai, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Toshitake Yaegashi, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Ichiro Mizushima, Yokohama, JP;
Yoshihiko Saito, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.