Fujisawa, Japan

Riichiro Shirota

USPTO Granted Patents = 185 

Average Co-Inventor Count = 3.6

ph-index = 33

Forward Citations = 5,208(Granted Patents)

Forward Citations (Not Self Cited) = 5,117(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kwasaki, JP (1994)
  • Kawasaki, JP (1990 - 2001)
  • Fujiwawa, JP (2003)
  • Kanagawa-prefecture, JP (2012)
  • Tokyo, JP (2005 - 2015)
  • Kanagawa-ken, JP (2005 - 2020)
  • Taichung, TW (2018 - 2021)
  • Hsinchu, TW (2010 - 2022)
  • Kanagawa, JP (1995 - 2024)
  • Fujisawa, JP (1996 - 2024)

Company Filing History:


Years Active: 1990-2025

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Areas of Expertise:
Flash Memory
Nand Flash Memory
Semiconductor Memory
Non-Volatile Memory
Vertical Nitride Transistor
Nor Flash Memory
Power Semiconductor
Chip Counterfeiting
Network Security
Data Erasing Method
Programming Method
Memory Device Reliability
185 patents (USPTO):Explore Patents

Title: Riichiro Shirota: Innovator in Semiconductor Technology

Introduction:

Riichiro Shirota, a brilliant inventor based in Fujisawa, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 180 patents, Shirota has consistently demonstrated his expertise in developing novel solutions. His recent patents, including the vertical nitride semiconductor transistor device and the NOR flash memory, showcase his innovative thinking and dedication to advancing the semiconductor industry.

Latest Patents:

Shirota's latest patents highlight his groundbreaking work in semiconductor devices. The vertical nitride semiconductor transistor device he developed stands out for its unique structure and low threshold voltage variation. By incorporating charge traps in the gate insulating film, Shirota achieved precise control over the threshold voltage, allowing for efficient current blocking and improved device performance.

Another notable patent is the NOR flash memory with a 3D structure. This flash memory design includes columnar portions, charge accumulating portions, and control gates. Shirota's innovative approach not only enhances memory cell density but also improves storage capacity and overall performance.

Career Highlights:

Throughout his career, Shirota has contributed his expertise to renowned companies in the semiconductor industry. He has made significant contributions to Kabushiki Kaisha Toshiba, where he played a crucial role in developing cutting-edge semiconductor technologies. Additionally, his work at Winbond Electronics Corp has further strengthened his reputation as a top innovator in the field.

Collaborations:

Shirota has collaborated with talented individuals in his field, including Fumitaka Arai and Seiichi Aritome. These collaborations have allowed for the exchange of knowledge, fostering innovation and the development of new ideas. Shirota's ability to work effectively in teams highlights his collaborative spirit and commitment to pushing boundaries in semiconductor technology.

Conclusion:

Riichiro Shirota's outstanding contributions to semiconductor technology through his multitude of patents demonstrate his position as a leading innovator in the field. With his latest inventions showcasing the advancements in nitride semiconductor transistors and NOR flash memory, Shirota continues to shape the future of the semiconductor industry. His collaborations and successful career at esteemed companies like Kabushiki Kaisha Toshiba and Winbond Electronics Corp further solidify Shirota's reputation as a trailblazer in the field. We eagerly anticipate his future endeavors and the impact he will make on the world of innovation.

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