The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Sep. 30, 2021
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Riichiro Shirota, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/30 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 43/35 (2023.02); H10B 43/30 (2023.02);
Abstract

A NAND flash memory and manufacturing method thereof are provided. The NAND flash memory is capable of preventing a short circuit between gates extending along a vertical direction. The NAND flash memory includes a substrate; a plurality of channel stacks formed on the substrate and extending along an X direction; an interlayer dielectric formed between the channel stacks; a plurality of trenches formed apart from each other in the interlayer dielectric and arranged along a Y direction; an insulator stack including a charge storage layer formed to cover sidewalls of each of the trenches; and a plurality of conductive vertical gates elongating along the vertical direction in a space formed by the insulator stack in each of the trenches and extending along the Y direction.


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