The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Sep. 01, 2023
Winbond Electronics Corp., Taichung, TW;
Riichiro Shirota, Kanagawa, JP;
Winbond Electronics Corp., Taichung, TW;
Abstract
An AND-type flash memory capable of achieving high integration after providing a miniaturized memory cell size includes: a plurality of diffusion regions () formed in a substrate in a column direction, a plurality of gates () formed between the opposite diffusion regions (), a selection control line (SGD), a selection control line (SGS), and a plurality of word lines (WLto WLn-). The selection control line (SGD) is connected to each gate of a bit line side selection transistor. The selection control line (SGS) is connected to each gate of a source line side selection transistor. The word lines (WLto WLn-) are connected to gates of memory cells. Each of the bit line side selection transistor, the source line side selection transistor, and the plurality of memory cells has a channel area in the row direction.