The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Dec. 01, 2004
Applicants:
Katsuyuki Sekine, Kanagawa, JP;
Yoshitaka Tsunashima, Kanagawa, JP;
Seiji Inumiya, Kanagawa, JP;
Akio Kaneko, Kanagawa, JP;
Motoyuki Sato, Kanagawa, JP;
Kazuhiro Eguchi, Kanagawa, JP;
Inventors:
Katsuyuki Sekine, Kanagawa, JP;
Yoshitaka Tsunashima, Kanagawa, JP;
Seiji Inumiya, Kanagawa, JP;
Akio Kaneko, Kanagawa, JP;
Motoyuki Sato, Kanagawa, JP;
Kazuhiro Eguchi, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using NDgas.