Yokkaichi, Japan

Takuya Futase

This inventor holds 17 USPTO granted patents and 3 published patent applications, primarily in Phase Change Memory. Top assignees: Sandisk Technologies Inc., Western Digital Technologies, Inc.. Active years: 2015-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takuya Futase. Retrieved from https://idiyas.com/inventor/takuya-futase-x2b4j288

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 70.6

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 56(Granted Patents)


Location History:

  • Mie, JP (2016)
  • Yokkaichi, JP (2016 - 2022)
  • Nagoya, JP (2015 - 2023)

Company Filing History:


Years Active: 2015-2023

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Areas of Expertise:
Phase Change Memory
Resistive Memory Cell
Memory Array
Aluminum Access Lines
Inter-Metal Breakdown Voltage
Damascene Bit Line
Three-Dimensional Memory
Etch-Resistant Walls
Silicided Bit Line
Air Gap Structures
Metal Indentation
NAND Flash Memory
17 patents (USPTO):Explore Patents

Inventor Spotlight: Takuya Futase

Introduction

Takuya Futase, an innovative inventor hailing from Yokkaichi, Japan, has made significant contributions to the field of memory technology with a remarkable portfolio of 17 patents. His work focuses primarily on enhancing the efficiency and performance of phase change memory devices, showcasing his expertise in semiconductor engineering and material science.

Latest Patents

Futase's latest innovations include two notable patents. The first, titled "Low resistance monosilicide electrode for phase change memory and methods of making the same," presents a method for forming a monosilicide electrode that improves memory performance. This technique involves creating a complex cell film stack on a substrate, utilizing a series of deposition and etching steps to develop a nickel monosilicide layer that enhances electrical conductivity.

The second patent, "Memory array containing capped aluminum access lines and method of making the same," outlines a novel design for cross-point memory devices. This design integrates first and second conductive line structures, enabling efficient data access through memory pillar structures, thus optimizing the overall functionality of memory arrays.

Career Highlights

Takuya Futase has an impressive career trajectory, having worked with leading technology companies such as SanDisk Technologies Inc. and Western Digital Technologies, Inc. His experience in these reputable organizations has undoubtedly contributed to the innovation of memory technologies, allowing him to apply his extensive knowledge while collaborating on groundbreaking projects.

Collaborations

Throughout his career, Futase has had the pleasure of working alongside esteemed colleagues, including Yuji Takahashi and Noritaka Fukuo. These collaborations have likely fostered an environment of creativity and innovation, culminating in the development of advanced memory technologies and enhancing the capabilities of memory devices.

Conclusion

Takuya Futase's contributions to the field of memory technology reinforce the importance of innovation and collaboration in advancing technological solutions. With 17 patents to his name, his work continues to influence the landscape of semiconductor technology, paving the way for future advancements in memory performance and efficiency. It will be exciting to see how his inventions shape the future of data storage and access technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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