The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Dec. 06, 2017
Sandisk Technologies Llc, Plano, TX (US);
Takuya Futase, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A resistive memory cell includes a barrier layer containing at least one of silicon and germanium, and a metal oxide layer including an oxide of a metal element that provides a reversible chemical reaction under a bidirectional electrical bias at an interface with the barrier material layer. The reversible chemical reaction is selected from a silicidation reaction between the barrier material layer and the metal element, a germanidation reaction between the barrier material layer and the metal element, oxidation of the metal element, and reduction of the metal element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile