The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Nov. 05, 2014
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Yuji Takahashi, Yokkaichi, JP;

Takuya Futase, Nagoya, JP;

Yoko Furihata, Yokkaichi, JP;

Satoshi Kamata, Yokkaichi, JP;

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8239 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/115 (2006.01); H01L 21/311 (2006.01); H01L 21/8247 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/31111 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76829 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract

A pattern of parallel lines defines first regions where no conductive material is to be located, a distance between adjacent lines in the first regions being smaller than a predetermined distance, and defines second regions where conductive material is to be located, a distance between adjacent lines in the second regions being larger than the predetermined distance. A subsequent layer caps air gaps between lines in the first regions. Conductive material is then deposited and planarized to form lines of conductive material in the second regions.


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