Yokkaichi, Japan

Yoko Furihata

This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignee: Sandisk Technologies Inc.. Active years: 2016-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoko Furihata. Retrieved from https://idiyas.com/inventor/yoko-furihata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 100.0

Average Co-Inventor Count = 5.2

ph-index = 5

Forward Citations = 211(Granted Patents)


Company Filing History:


Years Active: 2016-2018

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5 patents (USPTO):Explore Patents

Title: Yoko Furihata: Innovator in Three-Dimensional Memory Devices

Introduction

Yoko Furihata is a prominent inventor based in Yokkaichi, Japan. She has made significant contributions to the field of memory devices, particularly in the development of three-dimensional NAND memory technology. With a total of 5 patents to her name, Furihata continues to push the boundaries of innovation in this critical area of electronics.

Latest Patents

Furihata's latest patents include groundbreaking technologies that enhance the performance and efficiency of memory devices. One of her notable inventions is a three-dimensional NAND memory device that features word line driver devices situated on or above a substrate. This device incorporates an alternating stack of word lines and insulating layers, along with a plurality of memory stack structures that include a memory film and a vertical semiconductor channel. The invention also introduces through-memory-level via structures that electrically couple the word lines in a first memory block to the word line driver devices, optimizing the overall functionality of the memory device.

Another significant patent involves a three-dimensional memory device with electrically isolated support pillar structures. This invention outlines a method for forming a first tier structure that includes an alternating stack of insulating layers and sacrificial material layers over a substrate. The design ensures electrical isolation between the substrate and the vertical semiconductor layers, effectively preventing electrical shorts through the support pillar structures.

Career Highlights

Furihata has established herself as a key figure in the field of memory technology. Her work at Sandisk Technologies Inc. has been instrumental in advancing the capabilities of memory devices. She is recognized for her innovative approach and technical expertise, which have led to several patents that address critical challenges in memory device design and functionality.

Collaborations

Throughout her career, Furihata has collaborated with talented professionals in her field, including Jin Liu and Johann Alsmeier. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Yoko Furihata is a trailblazer in the realm of three-dimensional memory devices. Her innovative patents and contributions to Sandisk Technologies Inc. highlight her commitment to advancing technology in this vital sector. Furihata's work continues to inspire future innovations in memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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