The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Nov. 09, 2016
Sandisk Technologies Llc, Plano, TX (US);
Naohiro Hosoda, Yokkaichi, JP;
Takeshi Kawamura, Yokkaichi, JP;
Yoko Furihata, Yokkaichi, JP;
Kota Funayama, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A first tier structure including a first alternating stack of first insulating layers and first sacrificial material layers is formed over a substrate. First support openings and first memory openings are formed through the first tier structure. A dielectric material portion providing electrical isolation from the substrate is formed in each first memory openings. A second tier structure including a second alternating stack of second insulating layers and second sacrificial material layers is formed the first tier structure. Second support openings and second memory openings are formed through the second tier structure above the first support openings and the first memory openings. Memory stack structures are formed in inter-tier openings formed by adjoining the first and second memory openings. The dielectric material portions provide electrical isolation between the substrate and the vertical semiconductor layers formed within support pillar structures to prevent or reduce electrical shorts to the substrate through the support pillar structures.