logo

For the Inventor, By the Inventor

Yokkaichi, Japan

Naohiro Hosoda

This inventor holds 19 USPTO granted patents and 8 published patent applications. Top assignee: Sandisk Technologies Inc.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naohiro Hosoda. Retrieved from https://idiyas.com/inventor/naohiro-hosoda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 94.7

Average Co-Inventor Count = 3.2

ph-index = 7

Forward Citations = 237(Granted Patents)


Company Filing History:

goldMedal19 out of 4,955 
 
Sandisk Technologies Inc.
 patents

Years Active: 2018-2026

Loading Chart...
19 patents (USPTO):Explore Patents
1. 12720748 - Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same (2026-08-25),
2. 12550328 - Three-dimensional memory device including a mid-stack source layer and methods for forming the same (2026-02-10),
3. 12476192 - Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods for forming the same (2025-11-18),
4. 12456521 - Sub-block separation in NAND memory through word line based selectors (2025-10-28),
5. 12437817 - Sub-block separation in NAND memory through word line based selectors (2025-10-07),
6. 12387789 - X-direction divided sub-block mode in NAND (2025-08-12),
7. 12354944 - Three-dimensional memory device containing plural metal oxide blocking dielectric layers and method of making thereof (2025-07-08),
8. 11894298 - Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers (2024-02-06),
9. 11417621 - Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same (2022-08-16),
10. 11367733 - Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same (2022-06-21),
11. 11289416 - Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers (2022-03-29),
12. 11018152 - Method for etching bottom punch-through opening in a memory film of a multi-tier three-dimensional memory device (2021-05-25),
13. 11011506 - Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same (2021-05-18),
14. 10903237 - Three-dimensional memory device including stepped connection plates and methods of forming the same (2021-01-26),
15. 10665580 - Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same (2020-05-26),

Title: Naohiro Hosoda: Innovator in Memory Technology

Introduction

Naohiro Hosoda is an esteemed inventor based in Yokkaichi, Japan, with an impressive portfolio of 14 patents to his name. His contributions to the field of memory technology have made significant advancements in how data storage systems operate efficiently and effectively.

Latest Patents

Among his latest innovations, one particular patent stands out: the X-direction divided sub-block mode in NAND. This memory system utilizes an innovative approach by dividing each block into XY sub-blocks, allowing multiple memory operations to be executed in parallel. This configuration not only enhances speed but also optimizes resource use during programming and erase operations. Another notable patent involves a sophisticated three-dimensional memory device which incorporates plural metal oxide blocking dielectric layers, enhancing the overall performance and reliability of semiconductor structures.

Career Highlights

Naohiro Hosoda’s career is marked by his role at SanDisk Technologies Inc., where he has played a pivotal part in developing groundbreaking memory systems. His technical expertise and inventive mindset have contributed to the advancement of NAND flash memory technologies, making them faster and more efficient.

Collaborations

Throughout his career, Hosoda has collaborated with fellow engineers and inventors such as Masanori Tsutsumi and Yuji Fukano. Their combined efforts have fueled innovative projects, further propelling advancements in semiconductor technology.

Conclusion

With 14 patents showcasing his innovative spirit, Naohiro Hosoda exemplifies the qualities of a forward-thinking inventor. His contributions to memory technology not only push the boundaries of what is possible but also pave the way for future advancements in data storage solutions. As technology continues to evolve, inventors like Hosoda remain at the forefront, driving innovations that impact everyday life.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…