The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jul. 21, 2023
Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same
Sandisk Technologies Llc, Addison, TX (US);
Naohiro Hosoda, Yokkaichi, JP;
Masanori Tsutsumi, Yokkaichi, JP;
Shunsuke Takuma, Yokkaichi, JP;
Seiji Shimabukuro, Yokkaichi, JP;
Tatsuya Hinoue, Yokkaichi, JP;
Takashi Kashimura, Yokkaichi, JP;
Tomohiro Kubo, Yokkaichi, JP;
Hisakazu Otoi, Yokkaichi, JP;
Hiroyuki Tanaka, Yokkaichi, JP;
Takumi Moriyama, Yokkaichi, JP;
Ryota Suzuki, Yokkaichi, JP;
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A memory device includes an alternating stack of insulating layers and electrically conductive layers, such that a first electrically conductive layer of the electrically conductive layers is in contact with an underlying silicon oxycarbide liner and with an overlying silicon oxycarbide liner, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film containing a continuous memory material layer which continuously extends through the entire alternating stack.