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For the Inventor, By the Inventor

Yokkaichi, Japan

Seiji Shimabukuro

This inventor holds 32 USPTO granted patents and 2 published patent applications, primarily in Three-Dimensional Memory. Top assignee: Sandisk Technologies Inc.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seiji Shimabukuro. Retrieved from https://idiyas.com/inventor/seiji-shimabukuro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 87.5

Average Co-Inventor Count = 3.1

ph-index = 11

Forward Citations = 498(Granted Patents)


Company Filing History:

goldMedal32 out of 4,943 
 
Sandisk Technologies Inc.
 patents

Years Active: 2015-2026

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Areas of Expertise:
Three-Dimensional Memory
Silicon Oxycarbide Liners
Support Pillar Structures
Trench Patterning
Resistive RAM
Multi-Tier Memory
Epitaxial Growth
Floating Gate NAND
Memory Array
Thin Film Transistors
Hydrogen-Passivated Channels
Air Gap Isolation
32 patents (USPTO):Explore Patents
1. 12720748 - Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same (2026-08-25),
2. 12604474 - Trench patterning process using microcracking (2026-04-14),
3. 12408345 - Three-dimensional memory device with backside support pillar structures and methods of forming the same (2025-09-02),
4. 12382638 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2025-08-05),
5. 12213320 - Three-dimensional memory device with finned support pillar structures and methods for forming the same (2025-01-28),
6. 12046285 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2024-07-23),
7. 11942429 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2024-03-26),
8. 11844222 - Three-dimensional memory device with backside support pillar structures and methods of forming the same (2023-12-12),
9. 11702750 - Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer (2023-07-18),
10. 11637118 - Three-dimensional memory device containing auxiliary support pillar structures and method of making the same (2023-04-25),
11. 11532570 - Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same (2022-12-20),
12. 11473199 - Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer (2022-10-18),
13. 10818545 - Contact via structure including a barrier metal disc for low resistance contact and methods of making the same (2020-10-27),
14. 10546870 - Three-dimensional memory device containing offset column stairs and method of making the same (2020-01-28),
15. 10468413 - Method for forming hydrogen-passivated semiconductor channels in a three-dimensional memory device (2019-11-05),

Title: The Innovative Contributions of Seiji Shimabukuro

Introduction

Seiji Shimabukuro, a talented inventor based in Yokkaichi, Japan, has made significant strides in the field of memory device technology. With a total of 28 patents to his name, his work is primarily focused on three-dimensional memory devices that push the boundaries of current technological capabilities.

Latest Patents

Among his latest innovations, two notable patents stand out. The first patent describes a three-dimensional memory device featuring finned support pillar structures and methods for forming these structures. This device comprises an alternating stack of insulating layers and electrically conductive layers positioned over a substrate. Checkered memory openings extend vertically through one region of the stack, accompanied by memory opening fill structures and support pillar structures that enhance stability.

The second patent outlines a method for constructing a three-dimensional memory device utilizing double pitch word line formation. In this technology, a sequence of unit layer stacks consisting of insulating and sacrificial material layers is created over a substrate. Lateral recesses are formed by selectively removing the sacrificial materials, allowing for the creation of a complex vertical layer stack within these recesses. This innovative approach allows for precise memory element formation and access points for etching.

Career Highlights

Seiji Shimabukuro's career has been marked by his role at SanDisk Technologies Inc., where he has contributed to groundbreaking developments in memory technology. His ability to integrate complex designs with practical applications has made him a key figure in innovating advanced storage solutions.

Collaborations

Throughout his career, Shimabukuro has collaborated with fellow inventors, including Hiroyuki Ogawa and Naoki Takeguchi. These collaborations have fostered an environment of creativity and shared knowledge, further enhancing the quality and impact of their collective research and innovations.

Conclusion

Seiji Shimabukuro’s remarkable portfolio of patents and his contributions to advanced memory device technology position him as a leading inventor in his field. His latest innovations demonstrate a commitment to enhancing data storage methods, shaping the future of technology. As he continues to push the limits of what is possible, his work will undoubtedly inspire the next generation of innovators and researchers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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