IDiyas

For the Inventor, By the Inventor

Yokkaichi, Japan

Seiji Shimabukuro

USPTO Granted Patents = 30 

Average Co-Inventor Count = 3.1

ph-index = 11

Forward Citations = 469(Granted Patents)


Company Filing History:

goldMedal30 out of 4,519 
 
Sandisk Technologies Inc.
 patents

Years Active: 2015-2025

Loading Chart...
30 patents (USPTO):
1. 12408345 - Three-dimensional memory device with backside support pillar structures and methods of forming the same (2025-09-02),
2. 12382638 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2025-08-05),
3. 12213320 - Three-dimensional memory device with finned support pillar structures and methods for forming the same (2025-01-28),
4. 12046285 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2024-07-23),
5. 11942429 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2024-03-26),
6. 11844222 - Three-dimensional memory device with backside support pillar structures and methods of forming the same (2023-12-12),
7. 11702750 - Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer (2023-07-18),
8. 11637118 - Three-dimensional memory device containing auxiliary support pillar structures and method of making the same (2023-04-25),
9. 11532570 - Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same (2022-12-20),
10. 11473199 - Method and apparatus for depositing a multi-sector film on backside of a semiconductor wafer (2022-10-18),
11. 10818545 - Contact via structure including a barrier metal disc for low resistance contact and methods of making the same (2020-10-27),
12. 10546870 - Three-dimensional memory device containing offset column stairs and method of making the same (2020-01-28),
13. 10468413 - Method for forming hydrogen-passivated semiconductor channels in a three-dimensional memory device (2019-11-05),
14. 10355012 - Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof (2019-07-16),
15. 10354859 - Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the same (2019-07-16),

Title: The Innovative Contributions of Seiji Shimabukuro

Introduction

Seiji Shimabukuro, a talented inventor based in Yokkaichi, Japan, has made significant strides in the field of memory device technology. With a total of 28 patents to his name, his work is primarily focused on three-dimensional memory devices that push the boundaries of current technological capabilities.

Latest Patents

Among his latest innovations, two notable patents stand out. The first patent describes a three-dimensional memory device featuring finned support pillar structures and methods for forming these structures. This device comprises an alternating stack of insulating layers and electrically conductive layers positioned over a substrate. Checkered memory openings extend vertically through one region of the stack, accompanied by memory opening fill structures and support pillar structures that enhance stability.

The second patent outlines a method for constructing a three-dimensional memory device utilizing double pitch word line formation. In this technology, a sequence of unit layer stacks consisting of insulating and sacrificial material layers is created over a substrate. Lateral recesses are formed by selectively removing the sacrificial materials, allowing for the creation of a complex vertical layer stack within these recesses. This innovative approach allows for precise memory element formation and access points for etching.

Career Highlights

Seiji Shimabukuro's career has been marked by his role at SanDisk Technologies Inc., where he has contributed to groundbreaking developments in memory technology. His ability to integrate complex designs with practical applications has made him a key figure in innovating advanced storage solutions.

Collaborations

Throughout his career, Shimabukuro has collaborated with fellow inventors, including Hiroyuki Ogawa and Naoki Takeguchi. These collaborations have fostered an environment of creativity and shared knowledge, further enhancing the quality and impact of their collective research and innovations.

Conclusion

Seiji Shimabukuro’s remarkable portfolio of patents and his contributions to advanced memory device technology position him as a leading inventor in his field. His latest innovations demonstrate a commitment to enhancing data storage methods, shaping the future of technology. As he continues to push the limits of what is possible, his work will undoubtedly inspire the next generation of innovators and researchers.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…