The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Sep. 29, 2020
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11575 (2017.01); H01L 23/00 (2006.01); H01L 27/11582 (2017.01); H01L 27/11548 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11575 (2013.01); H01L 23/562 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
A alternating stack of insulating layers and sacrificial material layers is formed over a substrate. An array of memory opening fill structures and an array of support pillar structures are formed through the alternating stack. Backside trenches are formed through the alternating stack by performing an anisotropic etch process. The anisotropic etch process etches peripheral portions of a subset of the array of support pillar structures. The sacrificial material layers are replaced with electrically conductive layer by forming backside recesses while the support pillar structures provide mechanical support to the insulating layers.