The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Feb. 11, 2021
Sandisk Technologies Llc, Addison, TX (US);
Genta Mizuno, Yokkaichi, JP;
Kenzo Iizuka, Yokkaichi, JP;
Satoshi Shimizu, Yokkaichi, JP;
Keisuke Izumi, Yokkaichi, JP;
Tatsuya Hinoue, Yokkaichi, JP;
Yujin Terasawa, Yokkaichi, JP;
Seiji Shimabukuro, Yokkaichi, JP;
Ryousuke Itou, Yokkaichi, JP;
Yanli Zhang, San Jose, CA (US);
Johann Alsmeier, San Jose, CA (US);
Yusuke Yoshida, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A three-dimensional memory device includes a first word-line region including a first alternating stack of first word lines and continuous insulating layers, first memory stack structures vertically extending through the first alternating stack, a second word-line region comprising a second alternating stack of second word lines and the continuous insulating layers, second memory stack structures vertically extending through the second alternating stack, plural dielectric separator structures located between the first word-line region and the second word-line region, and at least one bridge region located between the plural dielectric separator structures and between the between the first word-line region and the second word-line region. The continuous insulating layers extend through the at least one bridge region between the first alternating stack in the first word-line region and the second alternating stack in the second word-line region.