IDiyas

For the Inventor, By the Inventor

Yokkaichi, Japan

Yusuke Yoshida

USPTO Granted Patents = 11 

Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 28(Granted Patents)


Company Filing History:

goldMedal11 out of 4,519 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2025

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11 patents (USPTO):
1. 12457735 - Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same (2025-10-28),
2. 11532570 - Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same (2022-12-20),
3. 11450685 - Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same (2022-09-20),
4. 10256272 - Resistive memory device containing etch stop structures for vertical bit line formation and method of making thereof (2019-04-09),
5. 10121965 - Resistive random access memory device containing discrete memory material portions and method of making thereof (2018-11-06),
6. 10115899 - Methods and apparatus for three-dimensional nonvolatile memory (2018-10-30),
7. 9934999 - Shallow trench isolation trenches and methods for NAND memory (2018-04-03),
8. 9673274 - Shallow trench isolation trenches and methods for NAND memory (2017-06-06),
9. 9673207 - Shallow trench isolation trenches and methods for NAND memory (2017-06-06),
10. 9443862 - Select gates with select gate dielectric first (2016-09-13),
11. 9281314 - Non-volatile storage having oxide/nitride sidewall (2016-03-08),

Title: Innovator Spotlight: Yusuke Yoshida and His Contributions to Three-Dimensional Memory Devices

Introduction

Yusuke Yoshida is a notable inventor based in Yokkaichi, Japan, recognized for his significant contributions to the field of memory devices. With a robust portfolio of 10 patents, he has made substantial advancements in technology, particularly in the realm of three-dimensional memory devices.

Latest Patents

One of Yoshida's latest patents is a sophisticated three-dimensional memory device designed to enhance structural support. This device includes a first word-line region featuring a first alternating stack of word lines interspersed with continuous insulating layers. It also contains memory stack structures that vertically extend through this alternating stack. The second word-line region incorporates a similar structure, complete with dielectric separator structures positioned between the two word-line regions and innovative bridge regions. These bridges are key to improving structural integrity, allowing the continuous insulating layers to span between different sections of the memory device.

Career Highlights

Yusuke Yoshida has enjoyed a fruitful career at SanDisk Technologies Inc., where he has pioneered advancements in memory technology. His expertise has not only contributed to his individual patent achievements but has also played a role in the company's innovative initiatives.

Collaborations

Throughout his career, Yoshida has collaborated with fellow inventors such as Akira Nakada and Tomohiro Uno. These partnerships have enabled the sharing of ideas and techniques, promoting innovation within their collective research efforts.

Conclusion

In summary, Yusuke Yoshida's inventive work in three-dimensional memory devices positions him as a key player in technological advancements. With his ongoing contributions at SanDisk Technologies Inc. and his collaborative efforts with other inventors, Yoshida continues to shape the future of memory technology and influence the industry positively.

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