The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Apr. 27, 2017
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventor:
Yusuke Yoshida, Yokkaichi, JP;
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 27/11529 (2017.01); H01L 27/06 (2006.01); H01L 27/11526 (2017.01); H01L 27/11546 (2017.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 27/0629 (2013.01); H01L 27/11526 (2013.01); H01L 27/11529 (2013.01); H01L 27/11546 (2013.01);
Abstract
A NAND memory is provided that includes a memory cell region and a peripheral region. The peripheral region includes a shallow trench isolation trench disposed in a substrate. The shallow trench isolation trench includes a first top surface, and a second top surface. A difference between a height of the second top surface and a height of the first top surface is less than a predetermined value Δ.