The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jun. 26, 2017
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Yusuke Yoshida, Yokkaichi, JP;
Akira Nakada, Yokkaichi, JP;
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); H01L 21/823487 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1608 (2013.01);
Abstract
A three dimensional ReRAM device includes an etch stop dielectric material layer overlying top surfaces of the dielectric rail structures and the dielectric pillar structures. The etch stop dielectric material layer includes openings in areas that overlie semiconductor pillars of the vertical select transistors. An array of metal nitride portions is located within the openings in the etch stop dielectric material layer. The etch stop dielectric material layer protects the underlying dielectric pillar structures during anisotropic etching steps without covering the metal nitride portions.