The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Mar. 26, 2015
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventor:
Yusuke Yoshida, Yokkaichi, JP;
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/11524 (2017.01); H01L 27/11529 (2017.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76224 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01);
Abstract
A NAND memory is provided that includes a memory cell region and a peripheral region. The peripheral region includes a shallow trench isolation trench disposed in a substrate. The shallow trench isolation trench has a first tab extension and a second tab extension. The first tab extension is disposed at a top portion of the shallow trench isolation trench, and extends in a first direction from the shallow trench isolation trench. The second tab extension is disposed at a top portion of the shallow trench isolation trench, and extends in a second direction from the shallow trench isolation trench.